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Gigahertz integrated graphene ring oscillators
Erica Guerriero1, Laura Polloni, Massimiliano Bianchi
1L-NESS, Department of Physics, Politecnico di Milano, Polo di Como, Via Anzani 42, 22100 Como, Italy.
ACS Nano
|May 30, 2013
Summary
Integrated graphene ring oscillators achieve record speeds for low-dimensional nanomaterials. These graphene oscillators demonstrate high performance, paving the way for advanced digital and analog electronic circuits.
Area of Science:
- Materials Science
- Electrical Engineering
- Nanotechnology
Background:
- Ring oscillators (ROs) are crucial for assessing digital technology performance limits.
- Existing ROs using low-dimensional nanomaterials show limited performance due to low current drive and large parasitics.
Purpose of the Study:
- To demonstrate integrated ring oscillators fabricated from wafer-scale graphene.
- To evaluate the performance of graphene-based ROs and their potential in electronic circuits.
Main Methods:
- Fabrication of integrated ROs using graphene grown by chemical vapor deposition.
- Characterization of oscillation frequency and output voltage swing.
- Demonstration of stand-alone graphene mixers for frequency conversion.
Main Results:
- Achieved highest oscillation frequency of 1.28 GHz and output voltage swing of 0.57 V.
- Graphene ROs exhibit the fastest performance among low-dimensional nanomaterials and are robust against supply voltage fluctuations.
- Successfully demonstrated the first integrated graphene oscillators and stand-alone graphene mixers.
Conclusions:
- Parasitic capacitances, not intrinsic graphene properties, limit current RO performance, indicating potential for further enhancement.
- These gigahertz graphene integrated circuits represent a significant advancement for high-speed digital and analog electronics.
- Graphene oscillators offer a promising platform for applications where high operating speed can be balanced against power consumption.
