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Increasing crystallinity for improved electrical conductivity of TiO2 blocking layers
Angela S Wochnik1, Matthias Handloser, Dajana Durach
1Department Chemistry, Ludwig-Maximilians-University Munich, Butenandtstrasse 5-13, 81377 Munich, Germany.
ACS Applied Materials & Interfaces
|May 30, 2013
Summary
We optimized the titanium dioxide (TiO2) blocking layer to boost organic and hybrid solar cell efficiency. Enhanced electrical conductivity and larger particle sizes improve charge transport, making these cells more competitive.
Area of Science:
- Materials Science
- Renewable Energy
- Photovoltaics
Background:
- Organic and hybrid solar cells offer promising alternatives to silicon-based devices.
- Improving charge carrier transport and separation is crucial for enhancing solar cell efficiency.
- Titanium dioxide (TiO2) is a key material for blocking layers in solar cells.
Purpose of the Study:
- To optimize the TiO2 blocking layer for improved organic and hybrid solar cell efficiency.
- To increase the electrical conductivity of the TiO2 layer for efficient charge carrier transport.
- To investigate the effect of calcination processes on TiO2 morphology and performance.
Main Methods:
- Optimization of calcination processes for sol-gel produced TiO2 films.
- Analysis of particle/domain size to enhance unpercolated pathways for charge carriers.
- Morphological studies of the TiO2 films to understand structure-property relationships.
Main Results:
- Achieved enhanced electrical conductivity in the TiO2 blocking layer.
- Increased particle/domain size in TiO2 films, leading to improved charge carrier pathways.
- Demonstrated potential for TiO2 blocking layer optimization to improve solar cell efficiency.
Conclusions:
- Optimized TiO2 blocking layers enhance charge carrier transport and separation in organic and hybrid solar cells.
- Calcination process tuning is effective in controlling TiO2 morphology and improving device performance.
- This research contributes to making organic and hybrid solar cells more competitive with silicon devices.

