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Published on: February 6, 2014
50-Gb/s silicon optical modulator with traveling-wave electrodes
Xiaoguang Tu1, Tsung-Yang Liow, Junfeng Song
1Institute of Microelectronics, Agency for Science, Technology and Research, 11 Science Park Road, Singapore Science Park II, 117685, Singapore.
Optics Express
|June 6, 2013
Summary
This study presents a silicon Mach-Zehnder Interferometer optical modulator achieving a 50.1 Gb/s data rate. Optimized doping and electrodes are key for high-performance silicon modulators in real-world applications.
Area of Science:
- Photonics
- Electrical Engineering
- Materials Science
Background:
- Silicon photonics is crucial for high-speed optical communication.
- Mach-Zehnder Interferometer (MZI) modulators are essential components in optical systems.
- Improving modulator efficiency and bandwidth is a continuous research goal.
Purpose of the Study:
- To demonstrate a high-performance silicon Mach-Zehnder Interferometer (MZI) optical modulator.
- To investigate the impact of doping profiles and electrode design on modulator performance.
- To achieve high data rates and dynamic extinction ratios for advanced optical communication.
Main Methods:
- Fabrication of a 4 mm-long silicon MZI phase shifter using a reverse-biased p-n junction.
- Implementation of compensation doping and low-loss traveling-wave electrodes.
- Characterization of modulation efficiency, phase shifter loss, and electro-optic bandwidth.
Main Results:
- Achieved a data rate of 50.1 Gb/s.
- Demonstrated a dynamic extinction ratio of 5.56 dB.
- Measured a modulation efficiency of ~26.7 V·mm and phase shifter loss of ~1.04 dB/mm.
- Obtained an electro-optic bandwidth of 25.6 GHz.
Conclusions:
- Optimized doping profiles and working points are critical for silicon optical modulator performance.
- The demonstrated MZI modulator meets requirements for demanding applications.
- The study highlights the importance of device design for achieving high-speed optical modulation.
