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Estimations of bulk geometrically necessary dislocation density using high resolution EBSD
1Department of Mechanical Engineering, Brigham Young University, UT 84602, USA.
Ultramicroscopy
|June 12, 2013
Summary
This study estimates geometrically necessary dislocation (GND) density using high-resolution electron backscatter diffraction (HR-EBSD) and lattice curvature. This offers a new method for characterizing GNDs in crystalline materials, advancing plasticity understanding.
Area of Science:
- Materials Science
- Crystallography
- Solid Mechanics
Background:
- Geometrically necessary dislocations (GNDs) are critical for understanding material plasticity.
- Electron backscatter diffraction (EBSD) is a standard technique for estimating GNDs via lattice orientation.
- Accurate characterization of GNDs is essential for predicting material behavior.
Purpose of the Study:
- To present a complementary method for estimating bulk GND density.
- To utilize local lattice curvature and strain gradients from HR-EBSD for GND assessment.
- To validate approximations of GND content through simulations.
Main Methods:
- Employing high-resolution electron backscatter diffraction (HR-EBSD) to measure local lattice curvature and strain gradients.
- Developing a continuum adaptation of classical dislocation distortion equations.
- Simulating random GND fields to validate estimation methods.
Main Results:
- A novel approach to estimate bulk GND density using HR-EBSD derived lattice curvature and strain gradients.
- Validation of various approximations for GND content through simulated GND fields.
- Demonstration of HR-EBSD as a powerful tool for GND characterization.
Conclusions:
- HR-EBSD offers a complementary and potentially more accurate method for quantifying GNDs.
- The developed continuum model aids in understanding and validating GND density estimations.
- This work advances the characterization of microstructural features influencing material plasticity.

