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Correlating results from high resolution EBSD with TEM- and ECCI-based dislocation microscopy: Approaching single
T J Ruggles1, Y S J Yoo2, B E Dunlap3
1National Institute of Aerospace, Hampton, VA, USA; Sandia National Laboratories, Albuquerque, NM, USA.
Ultramicroscopy
|January 11, 2020
Summary
This study introduces a novel method to reduce noise in high-resolution electron backscatter diffraction (HREBSD) measurements for crystalline materials. This technique accurately identifies dislocation types and densities, improving material analysis.
Area of Science:
- Materials Science
- Crystallography
- Electron Microscopy
Background:
- High-resolution electron backscatter diffraction (HREBSD) is a powerful SEM-based technique for measuring lattice distortion and inferring dislocation content.
- Image correlation uncertainties in HREBSD introduce measurement noise, leading to inaccurate dislocation identification.
Purpose of the Study:
- To develop and validate a method for reducing noise in HREBSD dislocation measurements.
- To improve the accuracy of dislocation type and density determination using HREBSD.
Main Methods:
- A novel method to remove problematic components of measured distortion in HREBSD data.
- Validation through comparative analysis with Transmission Electron Microscopy (TEM) and Electron Channeling Contrast Imaging (ECCI).
Main Results:
- The proposed method effectively reduces noise in HREBSD dislocation measurements.
- HREBSD successfully resolved individual dislocations and accurately identified Burgers vectors, comparable to TEM and ECCI.
Conclusions:
- The refined HREBSD technique provides accurate dislocation measurements, overcoming previous noise-related limitations.
- This advancement enhances the capability of HREBSD for detailed crystallographic defect analysis in materials.
