Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

5.2K
A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
Fundamental Principles
Accelerated...
5.2K
Overview of Electron Microscopy01:25

Overview of Electron Microscopy

12.8K
The wavelengths of visible light ultimately limit the maximum theoretical resolution of images created by light microscopes. Most light microscopes can only magnify 1000X, and a few can magnify up to 1500X. Electrons, like electromagnetic radiation, can behave like waves, but with wavelengths of 0.005 nm, they produce significantly greater resolution up to 0.05 nm as compared to 500 nm for visible light. An electron microscope (EM) can create a sharp image that is magnified up to 2,000,000X.
12.8K
Super-resolution Fluorescence Microscopy01:37

Super-resolution Fluorescence Microscopy

12.1K
Super-resolution fluorescence microscopy (SRFM) provides a better resolution than conventional fluorescence microscopy by reducing the point spread function (PSF). PSF is the light intensity distribution from a point that causes it to appear blurred. Due to PSF, each fluorescing point appears bigger than its actual size, and it is the PSF interference of nearby fluorophores that causes the blurred image. Various approaches to achieving higher resolution through SRFM have recently been...
12.1K
Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation01:26

Inductively Coupled Plasma Atomic Emission Spectroscopy: Instrumentation

584
Inductively coupled plasma (ICP) is the common plasma source used in atomic emission spectroscopy (AES), a technique that detects and analyzes various elements in a sample. This method is often called inductively coupled plasma atomic emission spectroscopy (ICP-AES).
There are three main types of inductively coupled plasma atomic emission spectroscopy  (ICP-AES) instruments: sequential, simultaneous multichannel, and Fourier transform instruments, with the latter being less commonly used....
584

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Oral reovirus therapy modulates gut microbiota to enhance antitumor immunity in colon cancer.

Cancer pathogenesis and therapy·2025
Same author

Opinion on "Tumor habitat-based MRI features assessing early response in locally advanced nasopharyngeal carcinoma".

Oral oncology·2024
Same author

Emerging Two-Dimensional Ti3C2-BiOCl Nanoparticles for Excellent Antimicrobial and Antioxidant Properties.

Cureus·2024
Same author

Letters to editor regarding the article "P4HA2 contributes to head and neck squamous cell carcinoma progression and EMT through PI3K/AKT signaling pathway".

Medical oncology (Northwood, London, England)·2024
Same author

Effect of thermal and NaOH pretreatment on water hyacinth to enhance the biogas production.

Environmental science and pollution research international·2023
Same author

Fabrications of hybrid Polyurethane-Pd doped ZrO<sub>2</sub> smart carriers for self-healing high corrosion protective coatings.

Environmental research·2022
Same journal

Efficient methods for wave propagation in electron microscopy.

Ultramicroscopy·2026
Same journal

Unsupervised deep image prior for sparse-view and limited-angle electron tomography.

Ultramicroscopy·2026
Same journal

Determination of the structure of the tertiary phase in the alloy Al<sub>10</sub>Mo<sub>10</sub>Nb<sub>10</sub>Ta<sub>10</sub>Ti<sub>30</sub>Zr<sub>30</sub> using convergent beam electron diffraction.

Ultramicroscopy·2026
Same journal

Predictive drift compensation of multi-frame STEM via live scan modification.

Ultramicroscopy·2026
Same journal

Deep PACBED: Multitask analysis of PACBED images using deep neural networks.

Ultramicroscopy·2026
Same journal

Guided progressive reconstructive imaging: A new quantization-based framework for low-dose, high-throughput and real-time analytical ptychography.

Ultramicroscopy·2026
See all related articles

Related Experiment Video

Updated: Jan 1, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.5K

Ultra-high spatial resolution selected area electron channeling patterns.

R D Kerns1, S Balachandran2, A H Hunter1

  • 1Michigan Center for Materials Characterization, University of Michigan, Ann Arbor, MI 48109-2102, United States.

Ultramicroscopy
|December 22, 2019
PubMed
Summary
This summary is machine-generated.

Researchers developed a new method for ultrahigh spatial resolution selected area electron channeling patterns (UHR-SACPs). This technique enhances electron channeling contrast imaging (ECCI) for various material applications.

Keywords:
ECCIElectron channelingHigh resolutionSACP

More Related Videos

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.7K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.3K

Related Experiment Videos

Last Updated: Jan 1, 2026

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization
07:50

Electron Channeling Contrast Imaging for Rapid III-V Heteroepitaxial Characterization

Published on: July 17, 2015

11.5K
Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis
07:24

Quantitative Atomic-Site Analysis of Functional Dopants/Point Defects in Crystalline Materials by Electron-Channeling-Enhanced Microanalysis

Published on: May 10, 2021

6.7K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

14.3K

Area of Science:

  • Materials Science
  • Electron Microscopy
  • Crystallography

Background:

  • Selected Area Electron Channeling Patterns (SAECPs) are crucial for materials analysis.
  • Existing methods for generating SAECPs have limitations in spatial resolution and collection speed.

Purpose of the Study:

  • To present a novel approach for producing ultrahigh spatial resolution selected area electron channeling patterns (UHR-SACPs).
  • To demonstrate the capability of this new method for enhanced electron channeling contrast imaging (ECCI).

Main Methods:

  • Utilized free lens control on an FEI/Thermo Elstar electron column to precisely position the electron beam.
  • Employed a service application or iFast scripting interface for modifying lens and deflector parameters.
  • Collected UHR-SACPs at standard instrument scanning rates and pixel densities.

Main Results:

  • Achieved UHR-SACPs with spatial resolutions of 300 nm at 20° angular range.
  • Demonstrated patterns approaching 125 nm spatial resolution with a 4° angular range.
  • Reported spatial resolution/angular range combinations significantly exceeding previous benchmarks.

Conclusions:

  • The developed approach enables rapid collection of high-accuracy crystallographic information.
  • This advancement significantly improves the applicability of ECCI across a wide range of materials.
  • The method offers a simple, push-button change in instrument mode for enhanced pattern generation.