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Related Experiment Video

Updated: May 10, 2026

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
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Published on: December 21, 2015

Dynamic random access memory devices based on bismuth sulfide nanoplates prepared from a single source precursor.

Gao-Yan Liu1, Ling-Yun Xu, Feng Zhou

  • 1Key laboratory of Organic Synthesis in Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, 215123, China.

Physical Chemistry Chemical Physics : PCCP
|June 12, 2013
PubMed
Summary

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Researchers developed bismuth sulfide (Bi2S3) nanoplates for dynamic random access memory (DRAM) devices. These devices exhibit a high ON/OFF ratio and long retention, utilizing Schottky contacts for volatile memory characteristics.

Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid-State Electronics

Background:

  • Bismuth sulfide (Bi2S3) is a promising semiconductor material for electronic applications.
  • Developing efficient and scalable synthesis methods for nanostructured materials is crucial.
  • Understanding the relationship between material morphology and device performance is key.

Purpose of the Study:

  • To synthesize large-scale semiconducting Bi2S3 nanoplates with controlled surface orientation.
  • To fabricate and characterize a novel memory device utilizing these Bi2S3 nanoplates.
  • To investigate the mechanism behind the volatile memory behavior.

Main Methods:

  • Large-scale synthesis of Bi2S3 nanoplates using a novel organic precursor, Bi(DTCA)3.
  • Dispersion of Bi2S3 nanoplates in dimethyl sulfoxide (DMSO) and deposition via spin-coating.

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Last Updated: May 10, 2026

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08:58

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Published on: December 21, 2015

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  • Fabrication of a sandwich-like memory device with an Indium Tin Oxide (ITO)/Bi2S3/Aluminum (Al) structure.

    • Main Results:

    • Successfully prepared highly oriented {001} surface Bi2S3 nanoplates.
    • Demonstrated dynamic random access memory (DRAM) characteristics in the fabricated ITO/Bi2S3/Al devices.
    • Achieved a maximum ON/OFF current ratio of 10^6 and a long retention time.

    Conclusions:

    • The novel synthesis route enables scalable production of high-quality Bi2S3 nanoplates.
    • The fabricated memory devices exhibit promising DRAM performance.
    • Volatile memory behavior is attributed to the Schottky contact formed between Bi2S3 nanoplates and Al electrodes.