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Reduction of gate leakage current on AlGaN/GaN high electron mobility transistors by electron-beam irradiation

S K Oh1, C G Song, T Jang

  • 1Department of Printed Electronics Engineering (WCU), Sunchon National University, Jeonnam 540-742, Korea.

Journal of Nanoscience and Nanotechnology
|June 13, 2013
PubMed

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