Related Experiment Video
Updated: May 10, 2026
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Electrical properties of magnesium incorporated zinc tin oxide thin film transistors by solution process
In Young Jeon1, Ji Yoon Lee, Dae Ho Yoon
1SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 440-746, Republic of Korea.
Abstract:
Zinc tin oxide (ZTO) films were fabricated on SiO2/Si substrate as a function of Mg concentration (the ratio of 3 to 10 atomic%) using a spin-coating process. For the characterization of thin film transistors (TFTs), Zn0.3Sn0.70 channel TFT exhibited a higher on/off ratio compared to Zn0.5 Sn.0.5O channel TFT because the higher Sn concentration can induce more charge carriers. 3 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs showed stable electrical performances such as I(on/off) - 1 x 10(7), micro(sat) = 1.40 cm2 V(-1) s(-1), and S = 0.39 V/decade. However, 10 atomic% Mg incorporated Zn0.3Sn0.7O channel TFTs deteriorated their electrical performances due to Mg segregation. The Mg incorporated Zn0.3Sn0.7O channel TFTs effectively suppress off-current and threshold voltage change during positive gate bias stress due to their strong bonding with oxygen.
