A highly pH-sensitive nanowire field-effect transistor based on silicon on insulator
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Updated: May 10, 2026

Preparation of Silicon Nanowire Field-effect Transistor for Chemical and Biosensing Applications
Published on: April 21, 2016
Denis E Presnov1, Sergey V Amitonov, Pavel A Krutitskii
1Lomonosov Moscow State University Skobeltsyn Institute of Nuclear Physics, Moscow 119991, Russia ; Laboratory of Cryoelectronics, Lomonosov Moscow State University, Moscow 119991, Russia.
Background:
An experimental and theoretical study of a silicon-nanowire field-effect transistor made of silicon on insulator by CMOS-compatible methods is presented.
Results:
A maximum Nernstian sensitivity to pH change of 59 mV/pH was obtained experimentally. The maximum charge sensitivity of the sensor was estimated to be on the order of a thousandth of the electron charge in subthreshold mode.
Conclusion:
The sensitivity obtained for our sensor built in the CMOS-compatible top-down approach does not yield to the one of sensors built in bottom-up approaches. This provides a good background for the development of CMOS-compatible probes with primary signal processing on-chip.
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