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Non-ohmic Devices00:51

Non-ohmic Devices

1.5K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
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P-N junction01:11

P-N junction

1.1K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.1K
Resistance01:19

Resistance

5.7K
When a current moves through any conductor, the conductor causes some level of difficulty for the current to flow. The measure of that difficulty is known as the resistance of the material and is represented by R. Every material has its own resistance. In the case of conductors, heat is emitted whenever a current passes through them. Resistance depends on the resistivity of the material. Resistivity is a characteristic of the material used to fabricate electrical components, whereas the...
5.7K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

913
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
913
Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

555
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
555
Fermi Level Dynamics01:12

Fermi Level Dynamics

655
The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
655

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Updated: Jan 18, 2026

Writing and Low-Temperature Characterization of Oxide Nanostructures
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Writing and Low-Temperature Characterization of Oxide Nanostructures

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Room-temperature negative differential resistance in single-atom devices.

Vladislav V Shorokhov1,2, Denis E Presnov1,2, Ilia D Kopchinskii2

  • 1Quantum Technology Centre, Faculty of Physics, Lomonosov Moscow State University, Leninskie Gory, 1(2), Moscow, 119991, Russia. krupenin@physics.msu.ru.

Nanoscale
|September 10, 2025
PubMed
Summary

Single-atom electronic devices using arsenic, phosphorus, and potassium dopants in silicon show negative differential resistance (NDR). Potassium-based devices achieve room-temperature NDR, paving the way for advanced single-atom electronics.

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Area of Science:

  • Solid State Physics
  • Quantum Electronics
  • Materials Science

Background:

  • Single-atom electronic devices offer potential for miniaturization.
  • Negative differential resistance (NDR) is a key phenomenon for electronic applications.
  • Silicon is a widely used semiconductor host matrix.

Purpose of the Study:

  • To investigate NDR in single-atom devices with various dopants in silicon.
  • To explore the potential for room-temperature operation of such devices.
  • To develop a theoretical model that accurately reproduces experimental observations.

Main Methods:

  • Fabrication and characterization of single-atom devices using arsenic, phosphorus, and potassium dopants in silicon.
  • Experimental observation and analysis of negative differential resistance (NDR).
  • Development and application of a theoretical model based on sequential electron tunneling and Keldysh diagram technique.

Main Results:

  • All fabricated devices exhibited NDR.
  • Potassium-doped silicon devices demonstrated NDR at room temperature.
  • The theoretical model successfully reproduced experimental results, incorporating effective local temperature and spectral fluctuation averaging.
  • Control experiments on undoped silicon revealed bandgap boundaries.

Conclusions:

  • The use of unconventional dopants like potassium in silicon enables high characteristic energies for single-atom devices.
  • Achieving room-temperature NDR is a significant advancement for single-atom electronics.
  • The developed model provides a robust framework for understanding electron transport in these systems.