Related Experiment Video
Updated: May 10, 2026
Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
Published on: October 23, 2018
Manipulation of subsurface donors in ZnO
Hao Zheng1, Alexander Weismann, Richard Berndt
1Institut für Experimentelle und Angewandte Physik, Christian-Albrechts-Universität zu Kiel, D-24098 Kiel, Germany. zheng@physik.uni-kiel.de
Abstract:
Single donors close to the ZnO(0001) surface are investigated with scanning tunneling microscopy. Their binding energies and depths are determined from spatially resolved spectra of the differential conductance. At elevated bias of the STM tip, vertical motion of the donors can be induced. The direction of the motion can be controlled by the bias polarity.
More Related Videos
10:49Nanomoulding of Functional Materials, a Versatile Complementary Pattern Replication Method to Nanoimprinting
Published on: January 23, 2013
08:18Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application
Published on: October 3, 2015