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Synthesis of In37P20(O2CR)51 Clusters and Their Conversion to InP Quantum Dots
Published on: May 7, 2019
Formation of indium carbide cluster ions: experimental and computational study
Jonathan Bernstein1, Eran Armon, Erez Zemel
1Schulich Faculty of Chemistry , Technion, Haifa 32000, Israel.
The Journal of Physical Chemistry. A
|June 18, 2013
Summary
Researchers discovered new indium carbide cluster ions using C60 ion bombardment. These novel gas phase ions, particularly In3C2(+), were analyzed for their structures and abundance, revealing unique bonding characteristics.
Area of Science:
- Materials Science
- Surface Science
- Physical Chemistry
Background:
- Gas phase cluster ions are crucial for understanding material properties.
- Indium carbide clusters have not been extensively studied.
- Novel methods for generating and analyzing these clusters are needed.
Purpose of the Study:
- To investigate the formation and structural properties of novel indium carbide cluster ions.
- To explore the potential of C60(-) ion bombardment as a method for producing these clusters.
- To determine the most abundant cluster ions and their bonding characteristics.
Main Methods:
- Bombardment of a clean indium surface with keV C60(-) ions.
- Mass spectrometric analysis of ejected positive In(m)C(n)(+) ions.
- Density functional theory (DFT) calculations for structural optimization.
Main Results:
- Efficient production of novel gas phase indium carbide ions (In(m)C(n)(+)) with balanced stoichiometries.
- In3C2(+) identified as the most abundant carbide cluster ion.
- Evidence for acetylenic/cumulenic bonding in abundant ions like In2C2(+) and In3C2(+).
- Observed odd/even intensity alternations in In3C(n)(+) and In4C(n)(+) abundances explained by DFT.
Conclusions:
- C60(-) ion bombardment is an effective technique for generating indium carbide cluster ions.
- The study reveals unique structural and bonding properties of these novel clusters.
- DFT calculations provide valuable insights into cluster stability and bonding.
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