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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
Biasing of FET01:22

Biasing of FET

Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the gate...
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
Biasing of P-N Junction01:16

Biasing of P-N Junction

The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...

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Related Experiment Video

Updated: May 10, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
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Optimized Fabrication Procedure for High-Quality Graphene-based Moiré Superlattice Devices

Published on: July 11, 2025

Focused-laser-enabled p-n junctions in graphene field-effect transistors.

Young Duck Kim1, Myung-Ho Bae, Jung-Tak Seo

  • 1Center for Subwavelength Optics and Department of Physics and Astronomy, Seoul National University, 1 Gwanak-ro, Gwanak-gu, Seoul, 151-747, Republic of Korea.

ACS Nano
|June 21, 2013
PubMed
Summary

Focused laser irradiation locally dopes graphene, revealing light-substrate interactions. This technique controls graphene

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Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes

Published on: June 25, 2020

Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Graphene's sensitivity to light makes it promising for optoelectronics.
  • Understanding light-substrate interactions is crucial for optimizing graphene devices.
  • Indirect effects of light, such as charge trapping, need further investigation.

Purpose of the Study:

  • To investigate the local doping effect in graphene induced by focused laser irradiation.
  • To understand the role of charge traps in gate oxides influenced by light.
  • To explore focused laser irradiation as a method for non-intrusive control of graphene's electronic properties.

Main Methods:

  • Utilized focused laser irradiation on graphene devices.
  • Performed electrical measurements to observe Dirac voltage shifts and double Dirac peaks.
  • Employed gate-dependent scanning photocurrent microscopy to analyze photocurrent response and p-n-p junction formation.

Main Results:

  • Demonstrated significant local doping effects in graphene via laser irradiation.
  • Observed large Dirac voltage shifts and/or double Dirac peaks, indicating controlled doping.
  • Confirmed the formation of a p-n-p junction, leading to a strong photocurrent response.

Conclusions:

  • Focused laser irradiation offers a novel, non-intrusive method to tune graphene's carrier type and concentration.
  • This technique provides insights into light-substrate interactions affecting graphene device performance.
  • The findings pave the way for advanced graphene-based optoelectronic device engineering.