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Published on: May 27, 2012
Joint mapping of mobility and trap density in colloidal quantum dot solids.
Philipp Stadler1, Brandon R Sutherland, Yuan Ren
1Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario M5S 3G4, Canada.
ACS Nano
|June 22, 2013
Summary
Nanodielectric field-effect transistors map trap states in colloidal quantum dot solids. This reveals the electronic band and gap structure, crucial for enhancing optoelectronic device performance.
Area of Science:
- Materials Science
- Nanoscience
- Condensed Matter Physics
Background:
- Field-effect transistors (FETs) are standard for studying electronic transport and doping in colloidal quantum dot (CQD) solids.
- However, their full potential for elucidating material electronic structure remains largely untapped.
Purpose of the Study:
- To deploy nanodielectric FETs for mapping the energy landscape within the band gap of CQD solids.
- To investigate the density of trap states in nanocrystal films by analyzing the subthreshold regime.
Main Methods:
- Utilized nanodielectric FETs with a self-limiting potentiostatic anodization growth mode for a thin gate dielectric.
- Employed lead sulfide (PbS) CQDs as the active region, treated with varied solvents and ligands.
- Focused analysis on the subthreshold regime to quantify trap state densities, complementing traditional mobility studies.
Main Results:
- Successfully mapped the energy landscape within the band gap of CQD solids.
- Quantified the density of trap states in PbS CQD films.
- Demonstrated that nanodielectric FETs offer a powerful method for characterizing electronic structure.
Conclusions:
- Comprehensive mapping of electronic band and gap structure is vital for understanding CQD solids.
- The findings suggest a new research direction for CQD investigations, focusing on trap state characterization.
- This approach can significantly advance the performance of optoelectronic devices based on CQD solids.
