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Updated: May 10, 2026

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

Unexpected dominance of vertical dislocations in high-misfit ge/si(001) films and their elimination by deep substrate

Anna Marzegalli1, Fabio Isa, Heiko Groiss

  • 1L-NESS and Dept. of Materials Science, Università degli Studi di Milano-Bicocca, via Cozzi 53, Milan, Italy. anna.marzegalli@unimib.it

Advanced Materials (Deerfield Beach, Fla.)
|June 22, 2013
PubMed

Keywords:
Gedislocationsheteroepitaxypatterningsemiconductors

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