Mode-locked VECSEL emitting 5 ps pulses at 675 nm

Area of Science:

• Optics and Photonics
• Semiconductor Lasers

Background:

• Vertical external-cavity surface-emitting lasers (VECSELs) are semiconductor lasers with unique properties.
• Visible-spectrum VECSELs are desirable for various applications but challenging to develop.
• Passively mode-locking VECSELs enables ultrashort pulse generation.

Purpose of the Study:

• To demonstrate a passively mode-locked VECSEL operating in the visible spectrum.
• To characterize the performance of a GaInP/AlGaInP/GaAs VECSEL at 675 nm.

Main Methods:

• Fabrication of a GaInP/AlGaInP/GaAs VECSEL structure.
• Integration of a saturable absorber mirror for passive mode-locking.
• Characterization of pulse duration, repetition rate, and average power.

Main Results:

• Successful demonstration of a picosecond VECSEL at 675 nm.
• Achieved ~5.1 ps pulse duration at a 973 MHz repetition rate.
• Obtained an average output power of 45 mW.

Conclusions:

• This work reports the first passively mode-locked VECSEL emitting fundamental laser radiation in the visible spectrum.
• The developed GaInP/AlGaInP/GaAs VECSEL demonstrates a viable approach for visible ultrashort pulse generation.
• This breakthrough opens possibilities for new applications in visible optoelectronics.