Imperfections in Crystal Structure: Stoichiometric Point Defects
Induced Electric Dipoles
Susceptibility, Permittivity and Dielectric Constant
Potential Due to a Polarized Object
Electrostatic Boundary Conditions in Dielectrics
Imperfections in Crystal Structure: Non-Stoichiometric Defects
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Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
Published on: April 12, 2018
Wanbiao Hu1, Yun Liu, Ray L Withers
1Research School of Chemistry, The Australian National University, Australian Capital Territory 0200, Australia.
Researchers developed a novel defect-engineering approach for colossal permittivity (CP) materials. This method utilizes localized electrons and defect dipoles to create high-performance CP materials for electronics and energy storage.
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