Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Fermi Level Dynamics01:12

Fermi Level Dynamics

The vacuum level denotes the energy threshold required for an electron to escape from a material surface. It is usually positioned above the conduction band of a semiconductor and acts as a benchmark for comparing electron energies within various materials.
Electron affinity in semiconductors refers to the energy gap between the minimum of its conduction band and the vacuum level and it is a critical parameter in determining how easily a semiconductor can accept additional electrons.
The work...
Fermi Level01:18

Fermi Level

The Fermi-Dirac function is represented by an S-shaped curve indicating the probability of an energy state being occupied by an electron at a given temperature. The Fermi level is the energy level at which there is a fifty percent chance of finding an electron, and it is positioned between the lower-energy valence band and the higher-energy conduction band.
At absolute zero temperature, electrons fill all energy states up to the Fermi level, leaving upper states empty. As the temperature rises,...
Valence Bond Theory02:42

Valence Bond Theory

Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
Debye–Huckel–Onsager Conductance Equation01:28

Debye–Huckel–Onsager Conductance Equation

The Debye-Hückel-Onsager equation is a cornerstone of physical chemistry, providing a method to determine the molar conductance (Λm) and molar conductance at infinite dilution (Λ°m) for uni-univalent electrolytes.Uni-univalent electrolytes are electrolytes that dissociate in solution to produce one cation with a +1 charge and one anion with a –1 charge per formula unit.This equation addresses two crucial phenomena: the asymmetry effect and the electrophoretic effect. According to this equation,...
UV–Vis Spectroscopy: Molecular Electronic Transitions01:16

UV–Vis Spectroscopy: Molecular Electronic Transitions

In Ultraviolet–Visible (UV–Vis) spectroscopy, the absorption of electromagnetic radiation is used to probe the electronic structure of molecules. This technique provides insights into molecular electronic transitions, particularly the movement of electrons between different molecular orbitals. Radiation is absorbed if the energy of the electromagnetic radiation passing through the molecule is precisely equal to the energy difference between the excited and ground states. During this process,...
¹H NMR: Interpreting Distorted and Overlapping Signals01:02

¹H NMR: Interpreting Distorted and Overlapping Signals

Spin systems where the difference in chemical shifts of the coupled nuclei is greater than ten times J are called first-order spin systems. These nuclei are weakly coupled, and their chemical shifts and coupling constant can generally be estimated from the well-separated signals in the spectrum.
As Δν decreases and the signals move closer, the doublets appear increasingly distorted. The intensities of the inner lines increase at the cost of those of the outer lines as the signals are slanted or...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Mid-Infrared Sensing and Ultrafast Photoresponse in Silicon-Based Plasmonic Detectors.

ACS photonics·2026
Same author

Two-Dimensional MoSe<sub>2</sub> Schottky-Barrier Transistors for Application in On-Chip Thermal Sensing.

ACS applied materials & interfaces·2026
Same author

Dimensional Scaling Effect in Percolative Oxide Semiconductor Transistors.

ACS nano·2026
Same author

Engineering Grain Architecture in Epitaxial Aluminum on Miscut Substrates Toward Various Clean Limits and Giant Superconductivity Modulation.

Small (Weinheim an der Bergstrasse, Germany)·2026
Same author

Tunable comb operation in terahertz quantum cascade ring lasers.

Optics express·2025
Same author

Modulating electronic transport properties of wafer-scale vapor-liquid-solid grown tungsten nitride by a vacuum gentle heating method.

Nanotechnology·2025

Related Experiment Video

Updated: May 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Tunable insulator-quantum Hall transition in a weakly interacting two-dimensional electron system.

Shun-Tsung Lo1, Yi-Ting Wang, Sheng-Di Lin

  • 1Graduate Institute of Applied Physics, National Taiwan University, Taipei 106, Taiwan. ctliang@phys.ntu.edu.tw.

Nanoscale Research Letters
|July 4, 2013
PubMed
Summary

Disorder influences resistivity crossings in 2D electron systems, showing ρxx ~ ρxy occurs at the inverse of classical Drude mobility, not the insulator-quantum Hall transition point.

More Related Videos

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Related Experiment Videos

Last Updated: May 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials
10:36

Advanced Experimental Methods for Low-temperature Magnetotransport Measurement of Novel Materials

Published on: January 21, 2016

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

Area of Science:

  • Condensed matter physics
  • Low-temperature physics
  • Mesoscopic physics

Background:

  • Two-dimensional electron systems (2DES) exhibit complex transport phenomena under magnetic fields.
  • Electron-electron (e-e) interactions and disorder are key factors influencing these properties.
  • Understanding the interplay between disorder and interactions is crucial for characterizing quantum Hall transitions.

Purpose of the Study:

  • To investigate the conditions under which the crossing of longitudinal (ρxx) and Hall (ρxy) resistivities occurs in a gated 2DES.
  • To differentiate the magnetic field at which ρxx ~ ρxy from the field of the insulator-quantum Hall transition.
  • To assess the impact of background magnetoresistance on transport measurements in 2DES.

Main Methods:

  • Low-temperature electrical transport measurements were conducted on a gated 2D electron system.
  • Varying gate voltages to tune carrier density and system properties.
  • Analysis of resistivity (ρxx and ρxy) as a function of magnetic field and temperature.

Main Results:

  • The crossing of ρxx and ρxy was observed to be disorder-driven and sensitive to gate voltage.
  • The condition ρxx ~ ρxy was found to occur at a magnetic field corresponding to the inverse of the classical Drude mobility (1/μD).
  • This crossing field was shown to be distinct from the magnetic field of the insulator-quantum Hall transition.

Conclusions:

  • The ρxx ~ ρxy crossing in 2DES is primarily governed by disorder and classical Drude mobility, not solely by quantum phase transitions.
  • Background magnetoresistance significantly influences observed transport properties, necessitating careful consideration.
  • Accurate calculation of renormalized mobility due to e-e interactions requires accounting for these background effects.