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Preparation and Characterization of C60/Graphene Hybrid Nanostructures
Published on: May 15, 2018
Tuning the layer-dependent doping effect of graphenes by C60
Minjiang Chen1, Haiqing Zhou, Fang Yu
1National Centre for Nanoscience and Technology, Beijing 100190, China.
Nanoscale
|July 9, 2013
Summary
Fullerenes (C60) induce hole doping in graphene, with the doping level dependent on graphene layer number. C60 on graphene (C60/G) shows more significant doping than graphene on C60 (G/C60).
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene, a single layer of carbon atoms, exhibits unique electronic properties.
- Fullerenes, like C60, are carbon allotropes with potential applications in electronic devices.
- Understanding doping mechanisms in graphene-based heterostructures is crucial for device engineering.
Purpose of the Study:
- To investigate the doping effects of C60 on n-layer graphene.
- To explore the relationship between graphene layer number and C60 doping.
- To compare the doping efficiency of C60/G vs. G/C60 interfaces.
Main Methods:
- Raman spectroscopy was employed to analyze the electronic properties of graphene.
- Fabrication of C60/graphene and graphene/C60 hybrid structures.
- Systematic variation of graphene layer number.
Main Results:
- C60 was found to induce hole doping in graphene.
- The doping level in graphene increased with the presence of C60.
- A stronger doping effect was observed for C60/G interfaces compared to G/C60 interfaces.
- Doping concentration correlated with the number of graphene layers.
Conclusions:
- C60 acts as a p-type dopant for graphene.
- The interface configuration significantly impacts the doping efficiency.
- Layer-dependent doping provides a pathway for tuning graphene's electronic properties.
