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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
Published on: May 24, 2020
Semi-transparent a-IGZO thin-film transistors with polymeric gate dielectric
Gun Woo Hyung1, Jian-Xun Wang, Zhao-Hui Li
1Department of Materials Science and Engineering, Hongik University, Seoul 121-791, Korea.
Abstract:
We report the fabrication of semi-transparent a-IGZO-based thin-film transistors (TFTs) with crosslinked poly-4-vinylphenol (PVP) gate dielectric layers on PET substrate and thermally-evaporated Al/Ag/Al source and drain (S&D) electrodes, which showed a transmittance of 64% at a 500-nm wavelength and sheet resistance of 16.8 omega/square. The semi-transparent a-IGZO TFTs with a PVP layer exhibited decent saturation mobilities (maximum approximately 5.8 cm2Ns) and on/off current ratios of approximately 10(6).
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