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Related Concept Videos

Scanning Electron Microscopy01:07

Scanning Electron Microscopy

A scanning electron microscope (SEM) is used to study the surface features of a sample by using an electron beam that scans the sample surface in a two-dimensional manner. Typically, areas between ~1 centimeter to 5 micrometers in width can be imaged. SEM can be used to image bacteria, viruses, tissues as well as larger samples like insects. Conventional SEM gives a magnification ranging from 20X to 30,000X and spatial resolution of 50 to 100 nanometers.
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The wavelengths of visible light ultimately limit the maximum theoretical resolution of images created by light microscopes. Most light microscopes can only magnify 1000X, and a few can magnify up to 1500X. Electrons, like electromagnetic radiation, can behave like waves, but with wavelengths of 0.005 nm, they produce significantly greater resolution up to 0.05 nm as compared to 500 nm for visible light. An electron microscope (EM) can create a sharp image that is magnified up to 2,000,000X.
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Related Experiment Video

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Microcrystal Electron Diffraction of Small Molecules
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Minimum detection limit and spatial resolution of thin-sample field-emission electron probe microanalysis.

Yugo Kubo1, Kotaro Hamada, Akira Urano

  • 1Analysis Technology Research Center, Sumitomo Electric Industries, Ltd., 1 Taya-cho, Sakae-ku, Yokohama 244-8588, Japan.

Ultramicroscopy
|July 24, 2013
PubMed
Summary

Electron probe microanalysis (EPMA) using a Schottky field emission electron gun offers superior detection sensitivity for thinned semiconductor samples. This high-resolution technique achieves high signal-to-noise ratios for effective laboratory analysis.

Keywords:
EDXEPMAFESTEMWDX

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Area of Science:

  • Materials Science
  • Analytical Chemistry
  • Physics

Background:

  • Characterizing semiconductor materials requires high sensitivity and spatial resolution.
  • Traditional electron probe microanalysis (EPMA) methods have limitations in detection limits.
  • Advancements in electron gun technology are crucial for improving microanalysis.

Purpose of the Study:

  • To determine the minimum detection limit and spatial resolution of thinned semiconductor samples using field emission electron probe microanalysis (FE-EPMA).
  • To compare the performance of FE-EPMA with energy dispersive X-ray spectrometry (EDS) coupled with scanning transmission electron microscopy (STEM).
  • To demonstrate the effectiveness of FE-EPMA for high-resolution, high-sensitivity elemental analysis.

Main Methods:

  • Utilized electron probe microanalysis (EPMA) with a Schottky field emission (FE) electron gun and wavelength dispersive X-ray spectrometry.
  • Analyzed thinned semiconductor samples.
  • Compared FE-EPMA results with those obtained from EDS-STEM analysis.

Main Results:

  • FE-EPMA demonstrated significantly superior detection sensitivity compared to EDS-STEM.
  • The minimum detection limit and spatial resolution for thinned semiconductor samples were successfully determined.
  • High probe current and high signal-to-noise ratios were achieved with FE-EPMA.

Conclusions:

  • FE-EPMA is a highly effective method for high-resolution, high-sensitivity elemental analysis in a laboratory setting.
  • The use of a Schottky field emission electron gun greatly enhances detection sensitivity in EPMA.
  • FE-EPMA offers a significant advantage over conventional methods for analyzing trace elements in thin samples.