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Updated: May 9, 2026

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
Single domain spin manipulation by electric fields in strain coupled artificial multiferroic nanostructures
M Buzzi1, R V Chopdekar, J L Hockel
1Paul Scherrer Institut, 5232 Villigen PSI, Switzerland.
We show how electric fields can uniformly rotate magnetization in ferromagnetic islands on ferroelectric crystals. This strain-induced magnetoelectric effect offers new ways to control magnetic materials.
Area of Science:
- Condensed matter physics
- Materials science
- Nanotechnology
Background:
- Controlling magnetic properties with electric fields is crucial for next-generation electronic devices.
- Magnetoelectric effects in multiferroic heterostructures offer a promising pathway for such control.
- Understanding the interplay between ferroelectric strain and ferromagnetic order is key.
Purpose of the Study:
- To demonstrate and investigate electric field-induced magnetization rotation in ferromagnetic nanostructures on ferroelectric substrates.
- To elucidate the underlying mechanism of strain-mediated magnetoelectric coupling.
- To explore the influence of ferroelectric domain structure on magnetization dynamics.
Main Methods:
- In situ x-ray photoemission electron microscopy (XPEEM) was used to observe magnetization dynamics.
- Submicron single-domain ferromagnetic islands were grown on a ferroelectric single crystal.
- Micromagnetic simulations were performed to correlate with experimental findings.
Main Results:
- Uniform 90° magnetization rotation was achieved in situ using an applied electric field.
- Experimental results were in excellent agreement with micromagnetic simulations.
- The magnetization reorientation was attributed to strain-induced magnetoelectric interactions.
- Three distinct strain-induced magnetization behavior regimes were identified, dependent on the ferroelectric domain structure.
Conclusions:
- Electric field control of magnetization in ferromagnetic islands on ferroelectric substrates is feasible via strain-mediated magnetoelectric coupling.
- The ferroelectric domain structure is a critical factor dictating the magnetization response.
- This work provides fundamental insights into magnetoelectric phenomena and potential applications in magnetic memory and logic devices.
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