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Reversible switching of InP nanowire growth direction by catalyst engineering.
Jia Wang1, Sébastien R Plissard, Marcel A Verheijen
1Department of Applied Physics, Eindhoven University of Technology, Eindhoven, The Netherlands.
Nano Letters
|August 1, 2013
Summary
We achieved high-yield indium phosphide (InP) nanowire growth, controlling the direction by adjusting catalyst droplet composition. This method allows reversible switching between [100] and [111] growth orientations.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Physics
Background:
- Indium phosphide (InP) nanowires are crucial for advanced electronic and optoelectronic devices.
- Controlling nanowire growth orientation is essential for device performance and integration.
Purpose of the Study:
- To demonstrate high-yield vapor-liquid-solid (VLS) growth of [100]-oriented InP nanowire arrays.
- To investigate the influence of catalyst droplet composition on InP nanowire growth direction.
- To establish a method for reversibly switching InP nanowire growth orientation.
Main Methods:
- Vapor-liquid-solid (VLS) growth technique.
- Utilizing catalyst droplets with controlled indium content.
- Kinetic nucleation modeling to understand growth mechanisms.
Main Results:
- Achieved a 97% yield for [100]-oriented InP nanowire arrays.
- Demonstrated reversible switching between [100] and [111] growth directions by varying indium concentration.
- Identified liquid-vapor interface energy, influenced by indium concentration, as the key factor governing growth direction.
Conclusions:
- High-yield [100]-oriented InP nanowire arrays can be reliably grown using VLS.
- Precise control over catalyst droplet composition enables tunable nanowire growth orientation.
- The findings provide a pathway for fabricating complex InP nanowire heterostructures for next-generation devices.
