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Low-frequency 1/f noise in graphene devices
1Nano-Device Laboratory, Department of Electrical Engineering, Materials Science and Engineering Program, Bourns College of Engineering, University of California, Riverside, California 92521, USA. balandin@ee.ucr.edu
Nature Nanotechnology
|August 6, 2013
Summary
Low-frequency noise, also known as 1/f noise, is a common phenomenon in electronics. This review examines 1/f noise in graphene and its impact on graphene-based electronic devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Electrical Engineering
Background:
- Low-frequency noise, termed 1/f noise, flicker noise, or excess noise, is prevalent across diverse systems.
- This noise phenomenon negatively impacts electronic devices and circuits, hindering the development of new materials and applications.
- Graphene's unique 2D structure and tunable carrier concentration make it an ideal system for investigating 1/f noise.
Purpose of the Study:
- To review the characteristic features of 1/f noise in graphene and few-layer graphene.
- To examine the implications of 1/f noise for graphene-based electronics, including high-frequency devices and sensors.
Main Methods:
- Literature review of studies on 1/f noise in graphene.
- Analysis of experimental data and theoretical models related to graphene noise.
Main Results:
- Graphene exhibits distinct 1/f noise characteristics due to its unique electronic properties.
- Understanding and controlling 1/f noise in graphene is crucial for practical device applications.
- The review synthesizes current knowledge on noise mechanisms in graphene.
Conclusions:
- 1/f noise in graphene presents both challenges and opportunities for advanced electronic applications.
- Further research is needed to fully comprehend and mitigate noise effects in graphene devices.
- This work provides a foundation for developing high-performance graphene-based electronics and sensors.
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