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Updated: May 9, 2026

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Enhanced thermoelectric performance of a BiCuSeO system via band gap tuning
1Laboratory of Structural Steel, Functional Materials and Heat Treatment Processing Technology, Beijing Institute of Aeronautical Materials, Beijing 100095, China. liuy431@gmail.com
Abstract:
Upon 20% Te substitution, the band gap decreases from 0.8 eV to 0.65 eV. Rising temperature promotes minority carrier jumps across the band gap, thereby improving electrical conductivity. With low thermal conductivity and large Seebeck coefficients, a remarkable ZT of 0.71 at 873 K is achieved for BiCuSe0.94Te0.06O.
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