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Tunable electroluminescence in planar graphene/SiO(2) memristors
Congli He1, Jiafang Li, Xing Wu
1Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China.
Advanced Materials (Deerfield Beach, Fla.)
|August 8, 2013
Summary
Simultaneously achieved electroluminescence and resistive switching in graphene/SiO2 memristors. Light emission wavelength is tunable (550-770 nm) by altering resistance states, offering new functionalities for silicon-compatible electronics.
Area of Science:
- Materials Science
- Nanotechnology
- Electronics
Background:
- Memristor devices are crucial for next-generation electronics.
- Graphene and silicon dioxide (SiO2) are widely used electronic materials.
- Electroluminescence is light emission due to electric current.
Purpose of the Study:
- To achieve simultaneous electroluminescence and resistive switching in graphene/SiO2 memristors.
- To tune the electroluminescence spectrum by controlling the device's resistance state.
- To explore new functionalities for memristor devices compatible with silicon electronics.
Main Methods:
- Fabrication of graphene/SiO2 memristor devices.
- Application of varying voltages to induce resistive switching.
- Measurement of electroluminescence spectra at different resistance states.
Main Results:
- Simultaneous electroluminescence and resistive switching were successfully demonstrated.
- Electroluminescence peaks were reliably tuned between 550 nm and 770 nm.
- Device resistance states were controllable via applied voltage, influencing emission wavelength.
Conclusions:
- Graphene/SiO2 memristors exhibit dual functionality of resistive switching and tunable electroluminescence.
- This combined functionality opens avenues for novel optoelectronic devices.
- The developed memristors are fully compatible with existing silicon-based electronic manufacturing.
