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Related Experiment Video

Updated: May 8, 2026

Metal-silicate Partitioning at High Pressure and Temperature: Experimental Methods and a Protocol to Suppress Highly Siderophile Element Inclusions
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Experimental setup for investigating silicon solid phase crystallization at high temperatures.

Thomas Schmidt1, Annett Gawlik, Henrik Schneidewind

  • 1Institute of Photonic Technology, Albert-Einstein-Straße 9, 07745 Jena, Germany. thomas.schmidt@ipht-jena.de

Optics Express
|August 14, 2013
PubMed
Summary
This summary is machine-generated.

This study introduces an experimental setup for observing solid phase crystallization in amorphous silicon thin films at 800°C. The method uses laser irradiation to achieve stable high temperatures, enabling future nucleation and growth studies.

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Area of Science:

  • Materials Science
  • Semiconductor Physics

Background:

  • Amorphous silicon thin films are crucial for electronic devices.
  • Understanding crystallization is key to controlling film properties.
  • High-temperature processing requires precise thermal management.

Purpose of the Study:

  • To present an experimental setup for measuring solid phase crystallization of amorphous silicon thin films.
  • To achieve and maintain stable high temperatures (approx. 800 °C) for crystallization studies.
  • To lay the groundwork for future investigations into nucleation and growth mechanisms.

Main Methods:

  • Utilizing molybdenum-SiO(2)-silicon film stacks.
  • Employing diode laser irradiation with a top hat profile.
  • Accurately calculating temperature evolution using thermal and optical parameters.
  • Applying a time-controlled laser power to maintain a constant central sample temperature.

Main Results:

  • An experimental setup capable of reaching and stabilizing temperatures around 800 °C was successfully developed.
  • The temperature evolution within the film stack can be accurately calculated.
  • A method for achieving a time-constant temperature in the sample center was demonstrated.

Conclusions:

  • The presented experimental setup is suitable for studying high-temperature solid phase crystallization.
  • The controlled thermal environment facilitates detailed observation of crystallization processes.
  • This work enables future in-depth analysis of nucleation and growth kinetics in amorphous silicon.