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Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Size-controlled InGaN/GaN nanorod array fabrication and optical characterization.

Si-Young Bae¹, Duk-Jo Kong, Jun-Yeob Lee

¹School of Information and Communications, Gwangju Institute of Science and Technology, 261 Cheondan-gwagiro, Buk-gu, Gwangju 500-712, South Korea.

|August 14, 2013

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We developed a cost-effective wet etching method to shrink Indium Gallium Nitride/Gallium Nitride (InGaN/GaN) nanorod arrays. This process enhances internal quantum efficiency and reduces fluctuations, paving the way for efficient photonic devices.

Area of Science:

Materials Science
Nanotechnology
Optoelectronics

Background:

Indium Gallium Nitride (InGaN)/Gallium Nitride (GaN) nanostructures are crucial for optoelectronic devices.
Fabricating uniform and efficient nanorod arrays presents challenges.

Purpose of the Study:

To demonstrate a cost-effective top-down fabrication method for InGaN/GaN nanorod arrays.
To investigate the impact of diameter reduction on nanorod properties and performance.

Main Methods:

Utilized a wet treatment process in a Potassium Hydroxide (KOH) solution for nanorod fabrication.
Reduced average nanorod diameter from 420 nm to 180 nm.
Analyzed spatial strain distribution using high-resolution cathodoluminescence (CL).

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Last Updated: May 8, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

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Main Results:

Successfully fabricated InGaN/GaN nanorod arrays with reduced diameters.
Observed higher internal quantum efficiency in smaller nanorods.
Found lower potential fluctuation in smaller nanorods.

Conclusions:

The KOH wet treatment is an effective method for fabricating smaller InGaN/GaN nanorods.
Reduced nanorod size improves internal quantum efficiency and reduces potential fluctuations.
These findings are beneficial for developing high-efficiency photonic devices.