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Silicon avalanche photodiode operation and lifetime analysis for small satellites
Yue Chuan Tan1, Rakhitha Chandrasekara, Cliff Cheng
1Centre for Quantum Technologies, National University of Singapore, Block S15, 3 Science Drive 2, Singapore 117543. cqttyc@nus.edu.sg
Optics Express
|August 14, 2013
Summary
This study presents a low-power voltage adjustment for silicon avalanche photodiodes (Si APDs) to counteract temperature changes in orbit. The research demonstrates Si APD resilience to radiation, suggesting extended operational lifetimes for satellite quantum experiments.
Area of Science:
- Quantum optics and instrumentation
- Semiconductor device physics
- Space science and engineering
Background:
- Silicon avalanche photodiodes (Si APDs) are crucial for sensitive light detection in quantum experiments.
- In-orbit temperature fluctuations and radiation pose significant challenges to Si APD performance and longevity.
- Existing Si APD technologies may not meet the stringent requirements for extended satellite missions.
Purpose of the Study:
- To develop and evaluate a low-power voltage adjustment mechanism for Si APDs to mitigate temperature-induced performance drifts.
- To assess the radiation hardness of Si APDs under gamma-ray and proton beam irradiation relevant to space environments.
- To predict the operational lifetime of Si APDs in a typical low Earth orbit for quantum applications.
Main Methods:
- Implementation of a novel low-power voltage control system for real-time temperature compensation.
- Irradiation testing of Si APDs using gamma-ray sources and proton beams to simulate space radiation.
- Performance characterization of irradiated Si APDs, including gain, noise, and efficiency measurements.
- Modeling and analysis of expected orbital radiation flux and temperature variations at 400 km altitude.
Main Results:
- The developed voltage adjustment mechanism effectively compensates for temperature fluctuations, maintaining stable Si APD operation.
- Si APDs exhibited robust performance after exposure to significant doses of gamma-ray and proton radiation.
- Post-irradiation analysis indicated minimal degradation in key performance parameters.
- Simulations predict that Si APDs, with the proposed adjustments, can exceed the typical satellite lifetime.
Conclusions:
- The low-power voltage adjustment mechanism enhances the stability and reliability of Si APDs in fluctuating space temperatures.
- Si APDs demonstrate sufficient radiation tolerance for long-duration satellite missions, particularly in quantum experiments.
- The findings support the use of Si APDs in future space-based quantum technologies, ensuring operational viability beyond satellite lifespans.
