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Bulk optical absorption of high resistivity silicon at 1550 nm
Jerome Degallaix1, Raffaele Flaminio, Danièle Forest
1Laboratoire des Matériaux Avancés, IN2P3/CNRS, Université de Lyon, Villeurbanne, France. j.degallaix@lma.in2p3.fr
Optics Letters
|August 14, 2013
Abstract:
We report on the measurement of the optical absorption of bulk crystalline silicon at 1550 nm. Using the photodeflection technique, absorption as low as 5 ppm/cm has been measured on a sample with a resistivity of 10 kΩ·cm. The absorption as a function of the resistivity has been derived for n-type silicon.

