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Published on: November 30, 2012
Backward optical parametric efficiency in quasi-phase-matched GaN waveguide presenting stitching faults.
Carlos Montes1, Pierre Aschieri, Marc de Micheli
1Laboratoire de Physique de la Matière Condensée (CNRS UMR 7336), Université de Nice-Sophia Antipolis, Nice, France. carlos.montes@unice.fr
Optics Letters
|August 14, 2013
Summary
We found that fragmented Gallium Nitride (GaN) waveguides can efficiently generate backward waves. This surprising result holds even with stitching errors, offering new possibilities for optical device fabrication.
Area of Science:
- Nonlinear optics
- Materials science
- Waveguide optics
Background:
- Optical parametric oscillators (OPOs) are crucial for generating tunable coherent light.
- Fabricating uniform quasi-phase-matched waveguides with nanoscale precision is challenging.
- Fragmented waveguides with stitching errors are typically considered detrimental to device performance.
Purpose of the Study:
- To investigate the performance of a backward mirrorless optical parametric oscillator in a fragmented Gallium Nitride (GaN) waveguide.
- To understand the impact of stitching errors on the coherence and efficiency of backward wave generation.
- To explore the potential of GaN epitaxy for achieving nanoscale poled periodicities.
Main Methods:
- Modeling a backward mirrorless optical parametric oscillator.
- Simulating a fragmented GaN waveguide with periodically poled elements and connection sections (stitching errors).
- Analyzing the phase locking dynamics between forward and backward propagating waves.
Main Results:
- The generated coherent phase of the backscattered wave effectively locks the phases of forward propagating waves.
- The dynamics of the fragmented waveguide are unexpectedly as efficient as a uniform quasi-phase-matched waveguide.
- Optimal coherence transfer to the backward wave requires perfect group-velocity matching and nanoscale poled periodicity.
Conclusions:
- Fragmented GaN waveguides can achieve efficient backward wave generation despite stitching errors.
- The phase-locking mechanism in these fragmented structures compensates for imperfections.
- Gallium Nitride (GaN) epitaxy is a viable method for fabricating the required nanoscale periodicities for advanced optical devices.

