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Fabrication of Schottky Diodes on Zn-polar BeMgZnO/ZnO Heterostructure Grown by Plasma-assisted Molecular Beam Epitaxy
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MgZnO p-n heterostructure light-emitting devices

Ji-Shan Liu1, Chong-Xin Shan, Bing-Hui Li

  • 1State Key Laboratory of Luminescence and Applications, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China.

Optics Letters
|August 14, 2013
PubMed
Summary

Researchers developed novel MgZnO heterostructure light-emitting diodes (LEDs) achieving ultraviolet emission at 355 nm. This breakthrough represents the shortest electroluminescence (EL) emission reported for ZnO-based p-n junction LEDs.

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