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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Monte Carlo study of the semimetal-insulator phase transition in monolayer graphene with a realistic interelectron

M V Ulybyshev1, P V Buividovich, M I Katsnelson

  • 1ITEP, B Cheremushkinskaya street 25, Moscow 117218, Russia and Institute for Theoretical Problems of Microphysics, Moscow State University, Moscow 119899, Russia.

Physical Review Letters
|August 20, 2013
PubMed

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