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Updated: May 8, 2026

Applying Dynamic Strain on Thin Oxide Films Immobilized on a Pseudoelastic Nickel-Titanium Alloy
Published on: July 28, 2020
Dynamically tracking the strain across the metal-insulator transition in VO2 measured using electromechanical
Pritesh Parikh1, Chitraleema Chakraborty, T S Abhilash
1Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research , Mumbai 400005, India.
Abstract:
We study the strain state of doubly clamped VO2 nanobeam devices by dynamically probing resonant frequency of the nanoscale electromechanical device across the metal-insulator transition. Simultaneous resistance and resonance measurements indicate M1-M2 phase transition in the insulating state with a drop in resonant frequency concomitant with an increase in resistance. The resonant frequency increases by ~7 MHz with the growth of metallic domain (M2-R transition) due to the development of tensile strain in the nanobeam. Our approach to dynamically track strain coupled with simultaneous resistance and resonance measurements using electromechanical resonators enables the study of lattice-involved interactions more precisely than static strain measurements. This technique can be extended to other phase change systems important for device applications.
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