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Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Xiao Zheng1, YiJing Yan, Massimiliano Di Ventra
1Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, China.
We discovered memory effects in quantum dots due to Kondo resonance, causing hysteresis in current flow. These effects, observable in experiments, could enable new quantum memory technologies.
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