Assessing the precision of strain measurements using electron backscatter diffraction--part 1: detector assessment

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Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

T B Britton1, J Jiang, R Clough

  • 1Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, United Kingdom.

Ultramicroscopy
|September 11, 2013
PubMed

Keywords:
Cross-correlationDeformationEBSDSiliconStrain

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