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Related Experiment Video

Updated: May 8, 2026

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

Published on: December 7, 2015

Subnanowatt carbon nanotube complementary logic enabled by threshold voltage control.

Michael L Geier¹, Pradyumna L Prabhumirashi, Julian J McMorrow

¹Department of Materials Science and Engineering and ‡Department of Chemistry, Northwestern University , Evanston, Illinois 60208, United States.

|September 12, 2013

Summary

This summary is machine-generated.

Researchers developed advanced single-walled carbon nanotube (SWCNT) complementary metal-oxide-semiconductor (CMOS) logic devices. These SWCNT devices offer ultra-low power consumption and ideal voltage transfer for efficient logic gate cascading.

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Fabrication of Low Temperature Carbon Nanotube Vertical Interconnects Compatible with Semiconductor Technology

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Area of Science:

Materials Science
Electrical Engineering
Nanotechnology

Background:

Single-walled carbon nanotubes (SWCNTs) offer unique electronic properties for next-generation electronics.
Developing efficient and scalable fabrication methods for SWCNT-based logic circuits remains a challenge.

Purpose of the Study:

To demonstrate thin-film SWCNT complementary metal-oxide-semiconductor (CMOS) logic devices.
To achieve subnanowatt static power consumption and full rail-to-rail voltage transfer for logic gate cascading.

Main Methods:

Fabrication of enhancement-mode p-type and n-type SWCNT thin-film transistors (TFTs) using a local metal gate structure.
Integration of complementary SWCNT TFTs to create CMOS inverter, NAND, and NOR logic gates.

Main Results:

Demonstrated CMOS logic gates operating at supply voltages as low as 0.8 V.
Achieved ideal rail-to-rail operation, subnanowatt static power consumption, high gain, and excellent noise immunity.
SWCNT TFTs exhibited widely separated and symmetric threshold voltages.

Conclusions:

The developed SWCNT CMOS logic devices provide a pathway for power-efficient advanced logic circuits.
Solution processable and large-area fabrication potential for SWCNT electronics.
Enables practical applications in low-power integrated systems.