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Updated: May 8, 2026

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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Cone-like graphene nanostructures: electronic and optical properties.
Pablo Ulloa1, Andrea Latgé, Luiz E Oliveira
1Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110-V, Valparaíso, Chile. monica.pacheco@usm.cl.
Nanoscale Research Letters
|September 14, 2013
Summary
This study explores the electronic and optical properties of graphene nanostructures. Results show that their characteristics depend on size, shape, and edge effects, influencing electronic states and light absorption.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Nanotechnology
Background:
- Graphene nanostructures exhibit unique electronic and optical properties.
- Understanding these properties is crucial for developing novel electronic and photonic devices.
Purpose of the Study:
- To theoretically investigate the electronic and optical properties of graphene nanodisks and nanocones.
- To analyze the influence of size, topology, and atomic arrangement on these properties.
Main Methods:
- Utilizing a tight-binding scheme for theoretical calculations.
- Employing a discrete position approximation for electronic states, including overlap integral effects.
- Calculating electronic densities of states and absorption coefficients.
Main Results:
- Electronic properties are sensitive to the number of atoms and geometry, especially in small systems.
- Charge distribution is localized at apices and borders in nanocones.
- Edge states dominate the density of states near the Fermi level for large structures (>5,000 atoms).
- Absorption spectra show polarization dependence in the infrared range.
Conclusions:
- Graphene nanostructure properties are tunable through geometric design.
- Edge states play a significant role in the electronic behavior of these nanostructures.
- The findings provide insights into the potential applications of graphene nanostructures in optoelectronics.

