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A Silicon-tipped Fiber-optic Sensing Platform with High Resolution and Fast Response
Published on: January 7, 2019
Annular fast electron transport in silicon arising from low-temperature resistivity
D A MacLellan1, D C Carroll, R J Gray
1Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG, United Kingdom.
Abstract:
Fast electron transport in Si, driven by ultraintense laser pulses, is investigated experimentally and via 3D hybrid particle-in-cell simulations. A transition from a Gaussian-like to an annular fast electron beam profile is demonstrated and explained by resistively generated magnetic fields. The results highlight the potential to completely transform the beam transport pattern by tailoring the resistivity-temperature profile at temperatures as low as a few eV.
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