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Currents induced by injected charge in junction detectors
Eugenijus Gaubas1, Tomas Ceponis, Vidas Kalesinskas
1Institute of Applied Research, Vilnius University, Sauletekio av. 9-III, LT-10223, Vilnius, Lithuania. eugenijus.gaubas@ff.vu.lt.
This study analyzes drifting charge-induced currents to predict performance in photo- and particle-detectors. It reveals how carrier behavior influences current pulse shapes, crucial for detector design.
Area of Science:
- Semiconductor physics
- Detector technology
Background:
- Predicting pulsed operational characteristics in photo- and particle-detectors is essential.
- Drifting charge-induced currents significantly impact detector performance.
Purpose of the Study:
- To analyze field changes induced by drifting charge in junction-controlled active areas.
- To model the formation of induced pulsed currents in partial and full depletion regimes.
Main Methods:
- One-dimensional analysis of electric field changes.
- Modeling current density considering carrier velocity, capture, and diffusion.
- Experimental validation using Silicon (Si) detectors.
Main Results:
- Derived current density expressions dependent on applied voltage, charge location, and capture parameters.
- Confirmed drift component aligns with Ramo's expression.
- Demonstrated diverse current pulse waveforms due to combined carrier dynamics.
Conclusions:
- Carrier drift, trapping, generation, and diffusion synchronously shape detector current pulses.
- Carrier density within the photo-injected domain critically affects pulse variations.
- The findings aid in understanding and optimizing photo- and particle-detector behavior.
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