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Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
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Erratum: "Kinase detection with gallium nitride based high electron mobility transistors" [Appl. Phys. Lett. 103,

Matthew S Makowski1, Isaac Bryan, Zlatko Sitar

  • 1Weldon School of Biomedical Engineering, Purdue University, West Lafayette, Indiana 47907, USA ; Indiana University School of Medicine, Indianapolis, Indiana 46202, USA.

Applied Physics Letters
|September 19, 2013
PubMed

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