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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Defect structure transformation after thermal annealing in a surface layer of Zn-implanted Si(001) substrates

Kirill Shcherbachev1, Vladimir Privezentsev, Vaclav Kulikauskas

  • 1Semiconductor and Dielectric Materials Science, National University of Science and Technology 'MISIS' , Leninskii prospekt, Moscow, 119049, Russian Federation.

Journal of Applied Crystallography
|September 19, 2013
PubMed

Keywords:
X-ray diffractionion implantationradiation-induced defectssilicon

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