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Universal scheme to generate metal-insulator transition in disordered systems

Ai-Min Guo1, Shi-Jie Xiong, X C Xie

  • 1Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|September 20, 2013
PubMed
Summary

We found a way to create a metal-insulator transition in random binary layer (RBL) systems. Tuning parameters can lead to metallic behavior by creating a band of extended states, regardless of disorder strength.

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