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Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

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Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The semiconductor's...
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Updated: May 7, 2026

Fabrication of Spatially Confined Complex Oxides
08:45

Fabrication of Spatially Confined Complex Oxides

Published on: July 1, 2013

Engineering correlation effects via artificially designed oxide superlattices.

Hanghui Chen1, Andrew J Millis, Chris A Marianetti

  • 1Department of Physics, Columbia University, New York, New York 10027, USA and Department of Applied Physics and Applied Mathematics, Columbia University, New York, New York 10027, USA.

Physical Review Letters
|October 1, 2013
PubMed
Summary
This summary is machine-generated.

This study predicts a novel superlattice material is an S=1 Mott insulator with unique electronic properties. Doping this material creates a two-dimensional system with tunable magnetic and electronic behavior.

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Last Updated: May 7, 2026

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Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Computational Chemistry

Background:

  • Superlattices offer tunable electronic and magnetic properties.
  • Mott insulators are crucial for understanding electron correlation effects.
  • LaTiO3 and LaNiO3 are perovskite oxides with distinct electronic behaviors.

Purpose of the Study:

  • To predict the electronic and magnetic properties of a [001] superlattice of LaTiO3 and LaNiO3.
  • To investigate the role of correlation effects and doping on the superlattice's behavior.
  • To differentiate this material from conventional Mott insulators.

Main Methods:

  • Ab initio calculations were employed to model the superlattice.
  • Density Functional Theory (DFT) and related methods were used.
  • Electronic structure and magnetic moments were analyzed.

Main Results:

  • The superlattice is predicted to be an S=1 Mott insulator with significant Ni magnetic moments.
  • A charge transfer gap is determined by Ni d and Ti d states, differing from conventional Mott insulators.
  • Correlation effects are enhanced at Ni sites through oxygen p-state filling and bond angle reduction.

Conclusions:

  • The LaTiO3/LaNiO3 superlattice exhibits unique Mott insulating behavior.
  • Doping induces a 2D single-band system with carriers on specific Ni or Ti orbitals.
  • This material presents a promising platform for exploring novel electronic and magnetic phenomena.