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Related Experiment Video

Updated: May 7, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
11:42

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

High-quality multiterminal suspended graphene devices.

Dong-Keun Ki1, Alberto F Morpurgo

  • 1Départment de Physique de la Matiére Condensée (DPMC) and Group of Applied Physics (GAP), University of Geneva , 24 quai Ernest-Ansermet, CH-1211 Geneva 4, Switzerland.

Nano Letters
|October 2, 2013
PubMed
Summary

We developed a new method for creating high-quality, suspended multiterminal graphene devices. This technique minimizes invasive contact effects, enabling advanced transport measurements for future graphene research.

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Area of Science:

  • Condensed matter physics
  • Materials science
  • Nanotechnology

Background:

  • Graphene's unique electronic properties make it promising for advanced electronic devices.
  • Fabricating high-quality graphene devices with reliable contacts is crucial for accurate measurements.
  • Existing methods often suffer from invasive metallic contacts that affect device performance.

Purpose of the Study:

  • To introduce a novel fabrication scheme for suspended, multiterminal graphene structures.
  • To achieve uniform, high-quality graphene devices through successful current annealing.
  • To enable advanced transport measurements not possible with simpler configurations.

Main Methods:

  • Development of a new scheme for suspended graphene fabrication.

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Preparation of Graphene Liquid Cells for the Observation of Lithium-ion Battery Material
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  • Utilizing etched constrictions to isolate metallic contacts from the probed graphene region.
  • Employing current annealing for device optimization.

    • Main Results:

    • Demonstrated reproducible narrow resistance peaks (δn ~ 10^9 cm⁻²) around charge neutrality.
    • Achieved high carrier mobility values exceeding 10⁶ cm²/Vs.
    • Observed integer quantum Hall plateaus at 30 mT and symmetry broken states at 200 mT.
    • Confirmed ballistic transport via negative multiterminal resistance measurements.

    Conclusions:

    • The new fabrication scheme yields uniform, high-quality multiterminal graphene devices.
    • The minimized invasive contact effect allows for precise characterization of graphene's electronic properties.
    • These devices are expected to be highly relevant for future studies of graphene-based systems.