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Updated: May 7, 2026
07:03
Measuring Magnetically-Tuned Ferroelectric Polarization in Liquid Crystals
Published on: August 15, 2018
Ferroelectric control of a Mott insulator
Hiroyuki Yamada1, Maya Marinova, Philippe Altuntas
11] National Institute of Advanced Industrial Science and Technology (AIST), Higashi 1-1-1, Tsukuba, Ibaraki 305-8562, Japan [2] Unité Mixte de Physique, CNRS-Thales, 1 Av. Augustin Fresnel, Campus de l'Ecole Polytechnique, Palaiseau 91120, France, and Université Paris-Sud, 91405 Orsay, France.
Scientific Reports
|October 4, 2013
Summary
Researchers achieved a significant ferroelectric field-effect in perovskite heterostructures. This breakthrough enables large resistance changes in Mott insulators, paving the way for advanced Mott-tronics devices.
Area of Science:
- Oxide electronics
- Condensed matter physics
- Materials science
Background:
- Electric field control of material properties is crucial for advanced electronics.
- Ferroelectric gating offers non-volatile memory potential but often shows limited modulation strength.
- Mott insulators possess unique electronic phases sensitive to external stimuli.
Purpose of the Study:
- To investigate a large ferroelectric field-effect in perovskite heterostructures.
- To explore the potential of ferroelectric gating for controlling Mott insulator properties.
- To develop efficient Mott-tronics devices with memory functionalities.
Main Methods:
- Fabrication of perovskite heterostructures combining CaMnO3 (Mott insulator) and BiFeO3 (ferroelectric).
- Measurement of channel resistance and carrier density modulation upon ferroelectric polarization reversal.
- Analysis of the influence of CaMnO3 layer thickness and interface effects.
Main Results:
- A substantial ferroelectric field-effect was observed in CaMnO3/BiFeO3 heterostructures.
- Channel resistance varied by fourfold near room temperature and tenfold at ~200 K.
- Carrier density modulation exceeded one order of magnitude, attributed to electrostatic doping and interface dipoles.
Conclusions:
- Ferroelectric gating can induce significant changes in Mott insulator properties.
- The observed effect is driven by electrostatic doping and interface phenomena.
- This work demonstrates the potential of ferroelectric gates for controlling orbital and spin phases in Mott systems, advancing Mott-tronics.
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