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Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation
Published on: December 21, 2015
Crystal structure and transport in merged InAs nanowires MBE grown on (001) InAs
Jung-Hyun Kang1, Yonatan Cohen, Yuval Ronen
1Braun Center for Submicron Research, Department of Condensed Matter Physics and ‡Department of Chemical Research Support, Weizmann Institute of Science , Rehovot 76100, Israel.
Abstract:
Molecular beam epitaxy growth of merging InAs nanowire intersections, that is, a first step toward the realization of a network of such nanowires, is reported. While InAs nanowires play already a leading role in the search for Majorana fermions, a network of these nanowires is expected to promote their exchange and allow for further development of this field. The structural properties of merged InAs nanowire intersections have been investigated using scanning and transmission electron microscope imaging. At the heart of the intersection, a sharp change of the crystal structure from wurtzite to perfect zinc blende is observed. The performed low-temperature conductance measurements demonstrate that the intersection does not impose an obstacle to current transport.

