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Updated: May 7, 2026
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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors
Published on: November 7, 2016
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25th anniversary article: key points for high-mobility organic field-effect transistors
Huanli Dong1, Xiaolong Fu, Jie Liu
1Beijing National laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry Chinese Academy of Sciences, Beijing, 100190, China; Department of Chemistry, Capital Normal University, Beijing, 100037, China.
Advanced Materials (Deerfield Beach, Fla.)
|October 10, 2013
Summary
High performance organic field-effect transistors (OFETs) achieve silicon-like mobility, enabling diverse electronic applications. Key advancements involve molecular, process, and interface engineering for enhanced OFET development.
Area of Science:
- Materials Science
- Organic Electronics
- Semiconductor Physics
Background:
- Organic field-effect transistors (OFETs) have seen significant performance improvements.
- OFET mobility is nearing polycrystalline silicon levels, enabling wider applications.
Purpose of the Study:
- To review key factors for developing high-mobility OFETs.
- To discuss challenges for practical OFET applications.
Main Methods:
- Analysis of molecular engineering strategies.
- Evaluation of process engineering techniques.
- Examination of interface engineering approaches.
Main Results:
- Molecular, process, and interface engineering are crucial for high-mobility OFETs.
- Impurities and testing conditions significantly impact OFET performance.
Conclusions:
- OFETs are approaching performance benchmarks for integrated circuits and electronic paper.
- Further research is needed to overcome challenges for widespread practical OFET adoption.
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