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Published on: July 24, 2015
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Electronic and plasmonic phenomena at graphene grain boundaries
1Department of Physics, University of California, San Diego, La Jolla, California 92093, USA.
Nature Nanotechnology
|October 15, 2013
Summary
Researchers visualized grain boundaries in chemical vapour deposition (CVD) graphene using infrared nano-imaging. These grain boundaries act as electronic barriers, impacting electron mobility and plasmon propagation in graphene devices.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Graphene's unique electronic and mechanical properties make it vital for optoelectronics and plasmonics.
- Chemical vapour deposition (CVD) is a key technique for producing graphene for technological applications.
- Characterizing grain boundaries in CVD-graphene is crucial but challenging.
Purpose of the Study:
- To develop and apply an infrared nano-imaging technique for visualizing and investigating grain boundaries in CVD-graphene.
- To probe the electronic properties of individual grain boundaries and their impact on graphene's performance.
Main Methods:
- Utilizing surface plasmon interference generated by reflections and scattering at graphene grain boundaries.
- Employing infrared nano-imaging to record and analyze plasmon interference patterns.
- Mapping large-area CVD graphene films and analyzing individual grain boundaries.
Main Results:
- Successfully visualized and mapped grain boundaries in large-area CVD graphene films.
- Demonstrated that grain boundaries act as electronic barriers, impeding electrical transport and plasmon propagation.
- Quantified the effective width of these barriers (approximately 10-20 nm), relating it to electronic screening and the Fermi wavelength.
Conclusions:
- Identified a microscopic mechanism explaining the reduced electron mobility in CVD-graphene.
- Showcased the potential of using these electronic barriers for tunable plasmon reflectors and phase retarders in graphene plasmonic circuits.

